Type Designator: 5N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 100 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 5 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 15 nC
trⓘ – Rise Time: 42 nS
Cossⓘ – Output Capacitance: 55 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-220 TO-251 TO-252 TO-220F TO-220F1 DFN-8
-17%
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