The TOSHIBA TTC5200 is an NPN high-power transistor with a collector to emitter voltage of 230V and a collector current of 15A. Toshiba TTC5200 Transistor has three pins: the base, the emitter, and the collector. The base is the input pin, the emitter is the output pin, and the collector is the common pin.
The TTC5200 transistor commonly use for power amplification. This is because TTC5200 can handle a large amount of current and voltage. When used in an amplifier circuit, the small current applied to the base is used to control a much larger current that is amplified and output to a speaker or other load.
This TTC5200 transistor can handle a maximum collector current of 15A and a maximum collector-emitter voltage of 230V. This makes it a suitable transistor for a variety of power amplification applications.
When a small current is applied to the base, it creates a forward bias condition in the base-emitter junction. This causes the junction to conduct, which allows current to flow from the base to the emitter.
The current that flows from the base to the emitter is amplified by the transistor. This means that a small current applied to the base can control a much larger current that flows between the collector and emitter.
The amount of current amplification is determined by the current gain of the transistor. The current gain of the TTC5200 transistor is typically around 35, which means that a small current of 1mA applied to the base can control a current of 35mA that flows between the collector and emitter.
It is important to note that the TTC5200 transistor is a bipolar transistor, which means that it can be damaged by reverse voltage. The maximum reverse voltage that the TTC5200 transistor can withstand is 20V.
Features : –
The Toshiba TTC5200 transistor is a high-power NPN transistor that offers a number of benefits, including:
High current and voltage handling: The TTC5200 can handle a maximum collector current of 15A and a maximum collector-emitter voltage of 230V. This makes it suitable for a variety of power amplification applications.
High current gain: The TTC5200 has a current gain of 35 at 7A collector current. This means that a small current applied to the base can control a much larger current that flows between the collector and emitter.
High junction temperature: The TTC5200 can withstand a junction temperature of 150°C. This makes it suitable for use in demanding applications where high temperatures are likely to occur.
Reliable and durable: The TTC5200 is a reliable and durable transistor that is made with high-quality materials. It is also available in a variety of packages to suit different applications.
Toshiba TTC5200 Tranistor Specifications : –
The Transistor Toshiba TTC5200 is a high-power NPN transistor that commonly use for power amplification. TOSHIBA TTC5200 has a high current and voltage handling capacity, as well as a high current gain. It is also a reliable and durable transistor that can withstand high temperatures. Here are the specifications of the Toshiba TTC5200 transistor:
Collector to emitter voltage (Vce): 230V
Collector to base voltage (Vcb): 230V
Package: TO-3P
Collector current (Ic): 15A
Power dissipation (pd): 150W
Junction temperature: 150°C
Current gain (hfe): 35 at 7A collector current
Collector to emitter saturation voltage (Vcesat): 3V
Collector to emitter breakdown voltage (Vceo): 230V
Toshiba TTC5200 Transistor Pin Description : –
The base is the input pin of the transistor. A small current applied to the base controls the flow of current between the collector and emitter. The collector is the output pin of the transistor. The current that flows between the collector and emitter is determined by the current applied to the base and the current gain of the transistor. The emitter is the common pin of the transistor. The current that flows from the emitter to the base is amplified by the transistor and flows out of the collector. Here is the pin description of the Toshiba TTC5200 transistor:
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