Type: IGBT
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 300 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 55 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 54 nS
Package: TO247
-13%
60n100 1000v 60a Igbt To-264 Package USED
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175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Specifications
Some Ratings and characteristics(@TC= 25°C):
Type: N-Channel
Package: TO-220
VDSS= 55V
ID= 49A
RDS(on)(Typ.)= 17.5mΩ
VGSS= ±20V
Ptot= 94W
Trr(Typ.)= 63ns
Tj= -55 to 175°C
Tstg= -55 to 175°C°C
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