Type Designator: 4N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 106 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 4 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 100 nC
trⓘ – Rise Time: 100 nS
Cossⓘ – Output Capacitance: 70 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 2.4 Ohm
-17%
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