he GW80H65 80H65 IGBT, part of our HB series, combines high-speed switching with low saturation voltage, making it an excellent choice for frequency converters.
Features
Advanced Structure:
Developed using a proprietary trench gate field-stop design.
Efficiency Maximization:
Balances conduction and switching losses.
Safe Paralleling:
Tight parameter distribution ensures secure parallel operation.
Fast Recovery Diode:
Enhances performance in antiparallel applications.
Applications
Photovoltaic Inverters:
Optimize energy conversion in solar power systems.
High-Frequency Converters:
Efficiently handle variable frequencies.
Technical Specifications
Voltage Rating: 650 V
Continuous Collector Current: 80 A (TC = 100 °C)
Junction Temperature: Up to 175 °C
Reviews
There are no reviews yet.