Type Designator: IKW75N60T
Type: IGBT + Anti-Parallel Diode
Marking Code: K75T60
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 428 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 36 nS
Coesⓘ – Output Capacitance, typ: 288 pF
Qgⓘ – Total Gate Charge, typ: 470 nC
Package: TO247
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-9%
75T65 New
₨ 380 Original price was: ₨ 380.₨ 350Current price is: ₨ 350.
LM301 Op-Amp IC
₨ 200 Original price was: ₨ 200.₨ 150Current price is: ₨ 150.
K75T60 USED Price In Pakistan
₨ 330 Original price was: ₨ 330.₨ 300Current price is: ₨ 300.
Category: FET/IGBT/Transistor/DIODE
Description
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Specifications
Some Ratings and characteristics(@TC= 25°C):
Type: N-Channel
Package: TO-220
VDSS= 55V
ID= 49A
RDS(on)(Typ.)= 17.5mΩ
VGSS= ±20V
Ptot= 94W
Trr(Typ.)= 63ns
Tj= -55 to 175°C
Tstg= -55 to 175°C°C

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